Localization of excitons in weakly disordered semiconductor structures: A model study

N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik (2010) 905–909.

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Journal Article | Published | English
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Gögh, N.; Thomas, P.; Kuznetsova, I.; Meier, TorstenLibreCat ; Varga, I.
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Journal Title
Annalen der Physik
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905-909
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Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. Annalen der Physik. 2010:905-909. doi:10.1002/andp.200910382
Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., & Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. Annalen Der Physik, 905–909. https://doi.org/10.1002/andp.200910382
@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, DOI={10.1002/andp.200910382}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }
Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen Der Physik, 2010, 905–9. https://doi.org/10.1002/andp.200910382.
N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” Annalen der Physik, pp. 905–909, 2010.
Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” Annalen Der Physik, 2010, pp. 905–09, doi:10.1002/andp.200910382.

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