A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs
A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017.
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Journal Article
| Published
| English
Author
Beloufa, Abbes;
Bouguenna, Driss;
Kermas, Nawel;
As, Donat JosefLibreCat 
Publishing Year
Journal Title
Journal of Electronic Materials
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2008-2017
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Beloufa A, Bouguenna D, Kermas N, As DJ. A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. Journal of Electronic Materials. 2020:2008-2017. doi:10.1007/s11664-019-07927-8
Beloufa, A., Bouguenna, D., Kermas, N., & As, D. J. (2020). A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. Journal of Electronic Materials, 2008–2017. https://doi.org/10.1007/s11664-019-07927-8
@article{Beloufa_Bouguenna_Kermas_As_2020, title={A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs}, DOI={10.1007/s11664-019-07927-8}, journal={Journal of Electronic Materials}, author={Beloufa, Abbes and Bouguenna, Driss and Kermas, Nawel and As, Donat Josef}, year={2020}, pages={2008–2017} }
Beloufa, Abbes, Driss Bouguenna, Nawel Kermas, and Donat Josef As. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” Journal of Electronic Materials, 2020, 2008–17. https://doi.org/10.1007/s11664-019-07927-8.
A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,” Journal of Electronic Materials, pp. 2008–2017, 2020.
Beloufa, Abbes, et al. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” Journal of Electronic Materials, 2020, pp. 2008–17, doi:10.1007/s11664-019-07927-8.
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