122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications
R. Wang, M. Kaynak, Y. Sun, J. Borngräber, S. Beer, B. Goettel, C. Scheytt, in: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications, Hilton, London Metropole, 2013.
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Conference Paper
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Author
Wang, Ruoyu;
Kaynak, Mehmet;
Sun, Yaoming;
Borngräber, Johannes;
Beer, Stefan;
Goettel, B.;
Scheytt, ChristophLibreCat
Abstract
Two half-wavelength 122 GHz patch antennas were designed and manufactured by using Benzocyclobutene (BCB) as a dielectric layer above the SiGe BiCMOS wafer. It enables the full integration of the millimeter-wave transceiver circuits and the antennas on a single chip to simplify the packaging procedure at millimeter-wave frequencies, thereby reducing the cost. The two patch antennas are fed by different feeding methods, i.e. microstrip transmission line direct feed and proximity-coupled feed. They exhibit similar performance and offer the flexibility of designing the interconnects (feed lines routing) between the circuits and the antennas within the very limited chip area. The measured gain is 3.4 dBi at 122.5 GHz (the center frequency of the ISM band of 122-123 GHz) for both designs with a simulated efficiency of about 50%.
Publishing Year
Proceedings Title
24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications
Conference Date
08.09.2013 – 11.09.2013
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Wang R, Kaynak M, Sun Y, et al. 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications. In: 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications. ; 2013. doi:10.1109/PIMRC.2013.6666358
Wang, R., Kaynak, M., Sun, Y., Borngräber, J., Beer, S., Goettel, B., & Scheytt, C. (2013). 122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications. 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications. https://doi.org/10.1109/PIMRC.2013.6666358
@inproceedings{Wang_Kaynak_Sun_Borngräber_Beer_Goettel_Scheytt_2013, place={Hilton, London Metropole}, title={122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications}, DOI={10.1109/PIMRC.2013.6666358}, booktitle={24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications}, author={Wang, Ruoyu and Kaynak, Mehmet and Sun, Yaoming and Borngräber, Johannes and Beer, Stefan and Goettel, B. and Scheytt, Christoph}, year={2013} }
Wang, Ruoyu, Mehmet Kaynak, Yaoming Sun, Johannes Borngräber, Stefan Beer, B. Goettel, and Christoph Scheytt. “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” In 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications. Hilton, London Metropole, 2013. https://doi.org/10.1109/PIMRC.2013.6666358.
R. Wang et al., “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS wafer process for system-on-chip applications,” 2013, doi: 10.1109/PIMRC.2013.6666358.
Wang, Ruoyu, et al. “122 GHz Patch Antenna Designs by Using BCB Above SiGe BiCMOS Wafer Process for System-on-Chip Applications.” 24th Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications, 2013, doi:10.1109/PIMRC.2013.6666358.
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