245-GHz subharmonic receiver in SiGe

Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On PP (2012) 183–186.

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Abstract
A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in fT/fmax=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single- side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW. Index Terms— SiGe technology, millimeter-wave circuits, 245 GHz, CB LNA, SHM, VCO, sub-harmonic receiver.
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Journal Title
Microwave Theory and Techniques, IEEE Transactions on
Volume
PP
Issue
99
Page
183-186
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Mao Y, Schmalz K, Borngräber J, Scheytt C. 245-GHz subharmonic receiver in SiGe . Microwave Theory and Techniques, IEEE Transactions on. 2012;PP(99):183-186.
Mao, Y., Schmalz, K., Borngräber, J., & Scheytt, C. (2012). 245-GHz subharmonic receiver in SiGe . Microwave Theory and Techniques, IEEE Transactions On, PP(99), 183–186.
@article{Mao_Schmalz_Borngräber_Scheytt_2012, title={245-GHz subharmonic receiver in SiGe }, volume={PP}, number={99}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph}, year={2012}, pages={183–186} }
Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt. “245-GHz Subharmonic Receiver in SiGe .” Microwave Theory and Techniques, IEEE Transactions On PP, no. 99 (2012): 183–86.
Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “245-GHz subharmonic receiver in SiGe ,” Microwave Theory and Techniques, IEEE Transactions on, vol. PP, no. 99, pp. 183–186, 2012.
Mao, Yanfei, et al. “245-GHz Subharmonic Receiver in SiGe .” Microwave Theory and Techniques, IEEE Transactions On, vol. PP, no. 99, 2012, pp. 183–86.

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