Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier

S. Bolte, N. Fröhleke, J. Böcker, in: 2016 IEEE International Telecommunications Energy Conference (INTELEC), IEEE, 2016.

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Bolte, Sven; Fröhleke, Norbert; Böcker, JoachimLibreCat
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2016 IEEE International Telecommunications Energy Conference (INTELEC)
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Bolte S, Fröhleke N, Böcker J. Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier. In: 2016 IEEE International Telecommunications Energy Conference (INTELEC). IEEE; 2016. doi:10.1109/intlec.2016.7749113
Bolte, S., Fröhleke, N., & Böcker, J. (2016). Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier. 2016 IEEE International Telecommunications Energy Conference (INTELEC). https://doi.org/10.1109/intlec.2016.7749113
@inproceedings{Bolte_Fröhleke_Böcker_2016, title={Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier}, DOI={10.1109/intlec.2016.7749113}, booktitle={2016 IEEE International Telecommunications Energy Conference (INTELEC)}, publisher={IEEE}, author={Bolte, Sven and Fröhleke, Norbert and Böcker, Joachim}, year={2016} }
Bolte, Sven, Norbert Fröhleke, and Joachim Böcker. “Comparison of the Performance of Gallium Nitride (GaN) Transistors in a Totem-Pole Power Factor Controlled (PFC) Rectifier.” In 2016 IEEE International Telecommunications Energy Conference (INTELEC). IEEE, 2016. https://doi.org/10.1109/intlec.2016.7749113.
S. Bolte, N. Fröhleke, and J. Böcker, “Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier,” 2016, doi: 10.1109/intlec.2016.7749113.
Bolte, Sven, et al. “Comparison of the Performance of Gallium Nitride (GaN) Transistors in a Totem-Pole Power Factor Controlled (PFC) Rectifier.” 2016 IEEE International Telecommunications Energy Conference (INTELEC), IEEE, 2016, doi:10.1109/intlec.2016.7749113.

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