Applicability of molecular statics simulation to partial dislocations in GaAs
T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).
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Journal Article
| Published
| English
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Journal Title
Solid State Communications
Volume
314-315
Article Number
113927
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Riedl T, Lindner J. Applicability of molecular statics simulation to partial dislocations in GaAs. Solid State Communications. 2020;314-315. doi:10.1016/j.ssc.2020.113927
Riedl, T., & Lindner, J. (2020). Applicability of molecular statics simulation to partial dislocations in GaAs. Solid State Communications, 314–315, Article 113927. https://doi.org/10.1016/j.ssc.2020.113927
@article{Riedl_Lindner_2020, title={Applicability of molecular statics simulation to partial dislocations in GaAs}, volume={314–315}, DOI={10.1016/j.ssc.2020.113927}, number={113927}, journal={Solid State Communications}, publisher={Elsevier BV}, author={Riedl, Thomas and Lindner, Jörg}, year={2020} }
Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” Solid State Communications 314–315 (2020). https://doi.org/10.1016/j.ssc.2020.113927.
T. Riedl and J. Lindner, “Applicability of molecular statics simulation to partial dislocations in GaAs,” Solid State Communications, vol. 314–315, Art. no. 113927, 2020, doi: 10.1016/j.ssc.2020.113927.
Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” Solid State Communications, vol. 314–315, 113927, Elsevier BV, 2020, doi:10.1016/j.ssc.2020.113927.
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