Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor
F.F. Vidor, G. Wirth, F. Assion, K. Wolff, U. Hilleringmann, IEEE Transactions on Nanotechnology 12 (2013) 296–303.
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Journal Article
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| English
Author
Vidor, F. F.;
Wirth, G.;
Assion, F.;
Wolff, K.;
Hilleringmann, UlrichLibreCat
Department
Publishing Year
Journal Title
IEEE Transactions on Nanotechnology
Volume
12
Issue
3
Page
296-303
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Vidor FF, Wirth G, Assion F, Wolff K, Hilleringmann U. Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor. IEEE Transactions on Nanotechnology. 2013;12(3):296-303. doi:10.1109/tnano.2012.2236891
Vidor, F. F., Wirth, G., Assion, F., Wolff, K., & Hilleringmann, U. (2013). Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor. IEEE Transactions on Nanotechnology, 12(3), 296–303. https://doi.org/10.1109/tnano.2012.2236891
@article{Vidor_Wirth_Assion_Wolff_Hilleringmann_2013, title={Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor}, volume={12}, DOI={10.1109/tnano.2012.2236891}, number={3}, journal={IEEE Transactions on Nanotechnology}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Vidor, F. F. and Wirth, G. and Assion, F. and Wolff, K. and Hilleringmann, Ulrich}, year={2013}, pages={296–303} }
Vidor, F. F., G. Wirth, F. Assion, K. Wolff, and Ulrich Hilleringmann. “Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor.” IEEE Transactions on Nanotechnology 12, no. 3 (2013): 296–303. https://doi.org/10.1109/tnano.2012.2236891.
F. F. Vidor, G. Wirth, F. Assion, K. Wolff, and U. Hilleringmann, “Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor,” IEEE Transactions on Nanotechnology, vol. 12, no. 3, pp. 296–303, 2013, doi: 10.1109/tnano.2012.2236891.
Vidor, F. F., et al. “Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor.” IEEE Transactions on Nanotechnology, vol. 12, no. 3, Institute of Electrical and Electronics Engineers (IEEE), 2013, pp. 296–303, doi:10.1109/tnano.2012.2236891.
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