Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric
K. Wolff, U. Hilleringmann, Solid-State Electronics 62 (2011) 110–114.
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Wolff, K.;
Hilleringmann, UlrichLibreCat
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Solid-State Electronics
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62
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1
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110-114
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Wolff K, Hilleringmann U. Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric. Solid-State Electronics. 2011;62(1):110-114. doi:10.1016/j.sse.2011.01.046
Wolff, K., & Hilleringmann, U. (2011). Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric. Solid-State Electronics, 62(1), 110–114. https://doi.org/10.1016/j.sse.2011.01.046
@article{Wolff_Hilleringmann_2011, title={Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric}, volume={62}, DOI={10.1016/j.sse.2011.01.046}, number={1}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wolff, K. and Hilleringmann, Ulrich}, year={2011}, pages={110–114} }
Wolff, K., and Ulrich Hilleringmann. “Solution Processed Inverter Based on Zinc Oxide Nanoparticle Thin-Film Transistors with Poly(4-Vinylphenol) Gate Dielectric.” Solid-State Electronics 62, no. 1 (2011): 110–14. https://doi.org/10.1016/j.sse.2011.01.046.
K. Wolff and U. Hilleringmann, “Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric,” Solid-State Electronics, vol. 62, no. 1, pp. 110–114, 2011, doi: 10.1016/j.sse.2011.01.046.
Wolff, K., and Ulrich Hilleringmann. “Solution Processed Inverter Based on Zinc Oxide Nanoparticle Thin-Film Transistors with Poly(4-Vinylphenol) Gate Dielectric.” Solid-State Electronics, vol. 62, no. 1, Elsevier BV, 2011, pp. 110–14, doi:10.1016/j.sse.2011.01.046.
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