Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique

J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.

Download
No fulltext has been uploaded.
Journal Article | Published | English
Author
Horstmann, J.T.; Hilleringmann, UlrichLibreCat; Goser, K.
Department
Publishing Year
Journal Title
Microelectronic Engineering
Volume
30
Issue
1-4
Page
431-434
ISSN
LibreCat-ID

Cite this

Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4
Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering, 30(1–4), 431–434. https://doi.org/10.1016/0167-9317(95)00280-4
@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={10.1016/0167-9317(95)00280-4}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }
Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” Microelectronic Engineering 30, no. 1–4 (2002): 431–34. https://doi.org/10.1016/0167-9317(95)00280-4.
J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” Microelectronic Engineering, vol. 30, no. 1–4, pp. 431–434, 2002, doi: 10.1016/0167-9317(95)00280-4.
Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” Microelectronic Engineering, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:10.1016/0167-9317(95)00280-4.

Export

Marked Publications

Open Data LibreCat

Search this title in

Google Scholar