Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique

T. Rieger, T. Riedl, J. Lindner, A. Pawlis, (2016).

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Conference Paper | English
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Publishing Year
Conference
19th International Conference on Molecular Beam Epitaxy
Conference Location
Montpellier (France)
Conference Date
2016-09-05 – 2016-09-09
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Rieger T, Riedl T, Lindner J, Pawlis A. Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique. 2016.
Rieger, T., Riedl, T., Lindner, J., & Pawlis, A. (2016). Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique. Presented at the 19th International Conference on Molecular Beam Epitaxy, Montpellier (France).
@article{Rieger_Riedl_Lindner_Pawlis_2016, series={poster Mo-P-8}, title={Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique}, author={Rieger, T. and Riedl, Thomas and Lindner, Jörg and Pawlis, A.}, year={2016}, collection={poster Mo-P-8} }
Rieger, T., Thomas Riedl, Jörg Lindner, and A. Pawlis. “Enhancement of the Critical Thickness of CdSe/ZnSe Quantum Wells via the Strain Compensation Technique.” Poster Mo-P-8, 2016.
T. Rieger, T. Riedl, J. Lindner, and A. Pawlis, “Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique.” 2016.
Rieger, T., et al. Enhancement of the Critical Thickness of CdSe/ZnSe Quantum Wells via the Strain Compensation Technique. 2016.

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