Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001)

R.M. Kemper, A. Kovacs, T. Riedl, D. Meertens, K. Tillmann, D. As, J. Lindner, in: 2014.

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Conference Paper | English
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Conference
European Materials Research Society Spring Meeting 2014
Conference Location
Lille (France)
Conference Date
2014-05-26 – 2014-05-30
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Kemper RM, Kovacs A, Riedl T, et al. Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001). In: ; 2014.
Kemper, R. M., Kovacs, A., Riedl, T., Meertens, D., Tillmann, K., As, D., & Lindner, J. (2014). Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001). Presented at the European Materials Research Society Spring Meeting 2014, Lille (France).
@inproceedings{Kemper_Kovacs_Riedl_Meertens_Tillmann_As_Lindner_2014, title={Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001)}, author={Kemper, R.M. and Kovacs, A. and Riedl, Thomas and Meertens, D. and Tillmann, K. and As, D. and Lindner, Jörg}, year={2014} }
Kemper, R.M., A. Kovacs, Thomas Riedl, D. Meertens, K. Tillmann, D. As, and Jörg Lindner. “Influence of Growth Area Reduction on Cubic GaN Heteroepitaxial Layer Growth on 3C-SiC(001),” 2014.
R. M. Kemper et al., “Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001),” presented at the European Materials Research Society Spring Meeting 2014, Lille (France), 2014.
Kemper, R. M., et al. Influence of Growth Area Reduction on Cubic GaN Heteroepitaxial Layer Growth on 3C-SiC(001). 2014.

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