Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates
A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K.D. Zeuner, K.D. Jöns, D. Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, S. Sanguinetti, 118 (2021).
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Conference Paper
| Published
| German
Author
Tuktamyshev, A;
Fedorov, A;
Bietti, S;
Vichi, S;
Zeuner, K.D;
Jöns, Klaus D.LibreCat;
Chrastina, D;
Tsukamoto, S;
Zwiller, V;
Gurioli, M;
Sanguinetti, S
Publishing Year
forms.conference.field.series_title_volume.label
Appl. Phys. Lett.
Volume
118
Issue
13
Article Number
133102
LibreCat-ID
Cite this
Tuktamyshev A, Fedorov A, Bietti S, et al. Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates. 2021;118(13).
Tuktamyshev, A., Fedorov, A., Bietti, S., Vichi, S., Zeuner, K. D., Jöns, K. D., Chrastina, D., Tsukamoto, S., Zwiller, V., Gurioli, M., & Sanguinetti, S. (2021). Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates (No. 133102; Vol. 118, Issue 13).
@article{Tuktamyshev_Fedorov_Bietti_Vichi_ Zeuner_Jöns_ Chrastina_Tsukamoto_Zwiller_Gurioli_et al._2021, series={Appl. Phys. Lett.}, title={Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates}, volume={118}, number={13133102}, author={Tuktamyshev, A and Fedorov, A and Bietti, S and Vichi, S and Zeuner, K.D and Jöns, Klaus D. and Chrastina, D and Tsukamoto, S and Zwiller, V and Gurioli, M and et al.}, year={2021}, collection={Appl. Phys. Lett.} }
Tuktamyshev, A, A Fedorov, S Bietti, S Vichi, K.D Zeuner, Klaus D. Jöns, D Chrastina, et al. “Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates.” Appl. Phys. Lett., 2021.
A. Tuktamyshev et al., “Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates,” vol. 118, no. 13. 2021.
Tuktamyshev, A., et al. Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates. no. 13, 133102, 2021.
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