Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)

E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As, Physica Status Solidi (C) 7 (2009) 104–107.

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Abstract
The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off heterojunction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD). HFETs with normally off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero interface.
Publishing Year
Journal Title
physica status solidi (c)
Volume
7
Issue
1
Page
104-107
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Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). physica status solidi (c). 2009;7(1):104-107. doi:10.1002/pssc.200982615
Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., & As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). Physica Status Solidi (C), 7(1), 104–107. https://doi.org/10.1002/pssc.200982615
@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7}, DOI={10.1002/pssc.200982615}, number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak, Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2009}, pages={104–107} }
Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” Physica Status Solidi (C) 7, no. 1 (2009): 104–7. https://doi.org/10.1002/pssc.200982615.
E. Tschumak et al., “Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001),” physica status solidi (c), vol. 7, no. 1, pp. 104–107, 2009.
Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” Physica Status Solidi (C), vol. 7, no. 1, Wiley, 2009, pp. 104–07, doi:10.1002/pssc.200982615.
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