Characterization of unintentional doping in nonpolar GaN

T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).

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Abstract
Unintentional doping in nonpolar a-plane 112¯0 gallium nitride GaN grown on r-plane 11¯02 sapphire using a three-dimensional 3D–two-dimensional 2D growth method has been characterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region adjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy SCM. The average width of this unintentionally doped layer is found to increase with increasing 3D growth time. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the unintentionally doped region has an average carrier concentration of 2.50.31018 cm−3. SCM also reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire interface. The observation of decreasing carrier concentration with distance from the GaN/sapphire interface along these features may suggest that the unintentional doping arises from oxygen diffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal emission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults BSFs and prismatic stacking faults PSFs, respectively. It is shown that the inclined features extending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We suggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect this doped material their emission is also enhanced due to reduced nonradiative recombination. Transmission electron microscopy confirms the presence of PSFs extending through the film at 60° from the GaN/sapphire interface.
Publishing Year
Journal Title
Journal of Applied Physics
Volume
107
Issue
2
Article Number
023503
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Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2). doi:10.1063/1.3284944
Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., & Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics, 107(2). https://doi.org/10.1063/1.3284944
@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={10.1063/1.3284944}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }
Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” Journal of Applied Physics 107, no. 2 (2010). https://doi.org/10.1063/1.3284944.
T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol. 107, no. 2, 2010.
Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” Journal of Applied Physics, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:10.1063/1.3284944.
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