Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths
D. Richter, R. Hafenbrak, K.D. Jöns, W.-M. Schulz, M. Eichfelder, M. Heldmaier, R. Roßbach, M. Jetter, P. Michler, 21 (2010).
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Conference Paper
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Author
Richter, D;
Hafenbrak, R;
Jöns, Klaus D.LibreCat;
Schulz, W-M;
Eichfelder, M;
Heldmaier, M;
Roßbach, R;
Jetter, M;
Michler, P
Publishing Year
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Nanotechnology
Volume
21
Article Number
125606
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Richter D, Hafenbrak R, Jöns KD, et al. Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths. 2010;21.
Richter, D., Hafenbrak, R., Jöns, K. D., Schulz, W.-M., Eichfelder, M., Heldmaier, M., Roßbach, R., Jetter, M., & Michler, P. (2010). Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths (No. 125606; Vol. 21).
@article{ Richter_Hafenbrak_Jöns_Schulz_Eichfelder_Heldmaier_Roßbach_Jetter_Michler_2010, series={Nanotechnology }, title={Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths}, volume={21}, number={125606}, author={ Richter, D and Hafenbrak, R and Jöns, Klaus D. and Schulz, W-M and Eichfelder, M and Heldmaier, M and Roßbach, R and Jetter, M and Michler, P}, year={2010}, collection={Nanotechnology } }
Richter, D, R Hafenbrak, Klaus D. Jöns, W-M Schulz, M Eichfelder, M Heldmaier, R Roßbach, M Jetter, and P Michler. “Low-Density MOVPE Grown InGaAs QDs Exhibiting Ultra-Narrow Single Exciton Linewidths.” Nanotechnology , 2010.
D. Richter et al., “Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths,” vol. 21. 2010.
Richter, D., et al. Low-Density MOVPE Grown InGaAs QDs Exhibiting Ultra-Narrow Single Exciton Linewidths. 125606, 2010.
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