Gain recovery dynamics in active type-II semiconductor heterostructures

T. Meier, F. Schäfer, M. Stein, J. Lorenz, F. Dobener, C. Ngo, J.T. Steiner, C. Fuchs, W. Stolz, K. Volz, J. Hader, J.V. Moloney, S.W. Koch, S. Chatterjee, Applied Physics Letters 122 (2023).

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Journal Article | Published | English
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Meier, TorstenLibreCat ; Schäfer, F.; Stein, M.; Lorenz, J.; Dobener, F.; Ngo, C.; Steiner, J. T.; Fuchs, C.; Stolz, W. ; Volz, K.; Hader, J.; Moloney, J.V.
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Journal Title
Applied Physics Letters
Volume
122
Issue
8
Article Number
082104
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Meier T, Schäfer F, Stein M, et al. Gain recovery dynamics in active type-II semiconductor heterostructures. Applied Physics Letters. 2023;122(8). doi:10.1063/5.0128777
Meier, T., Schäfer, F., Stein, M., Lorenz, J., Dobener, F., Ngo, C., Steiner, J. T., Fuchs, C., Stolz, W., Volz, K., Hader, J., Moloney, J. V., Koch, S. W., & Chatterjee, S. (2023). Gain recovery dynamics in active type-II semiconductor heterostructures. Applied Physics Letters, 122(8), Article 082104. https://doi.org/10.1063/5.0128777
@article{Meier_Schäfer_Stein_Lorenz_Dobener_Ngo_Steiner_Fuchs_Stolz_Volz_et al._2023, title={Gain recovery dynamics in active type-II semiconductor heterostructures}, volume={122}, DOI={10.1063/5.0128777}, number={8082104}, journal={Applied Physics Letters}, author={Meier, Torsten and Schäfer, F. and Stein, M. and Lorenz, J. and Dobener, F. and Ngo, C. and Steiner, J. T. and Fuchs, C. and Stolz, W. and Volz, K. and et al.}, year={2023} }
Meier, Torsten, F. Schäfer, M. Stein, J. Lorenz, F. Dobener, C. Ngo, J. T. Steiner, et al. “Gain Recovery Dynamics in Active Type-II Semiconductor Heterostructures.” Applied Physics Letters 122, no. 8 (2023). https://doi.org/10.1063/5.0128777.
T. Meier et al., “Gain recovery dynamics in active type-II semiconductor heterostructures,” Applied Physics Letters, vol. 122, no. 8, Art. no. 082104, 2023, doi: 10.1063/5.0128777.
Meier, Torsten, et al. “Gain Recovery Dynamics in Active Type-II Semiconductor Heterostructures.” Applied Physics Letters, vol. 122, no. 8, 082104, 2023, doi:10.1063/5.0128777.

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