Disorder-induced Dephasing in Semiconductors
T. Meier, S. Weiser, J. Möbius, A. Euteneuer, E.J. Mayer, W. Stolz, M. Hofmann, W.W. Rühle, P. Thomas, S.W. Koch, Physical Review B 61 (2000).
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Journal Article
| Published
| English
Author
Meier, TorstenLibreCat 
;
Weiser, S.;
Möbius, J.;
Euteneuer, A.;
Mayer, E.J.;
Stolz, W.;
Hofmann, M.;
Rühle, W.W.;
Thomas, P.;
Koch, S.W.
;
Weiser, S.;
Möbius, J.;
Euteneuer, A.;
Mayer, E.J.;
Stolz, W.;
Hofmann, M.;
Rühle, W.W.;
Thomas, P.;
Koch, S.W.Department
Abstract
Microscopic calculations including energetic disorder and Coulomb correlations up to third order in the laser field are performed. The resulting four-wave-mixing signals show polarization-dependent dephasing induced by diagonal disorder. The correct modeling of this disorder-induced dephasing requires the proper inclusion of Coulomb correlations. The theoretical results are in good qualitative agreement with measurements performed on a variety of quantum-well samples.
Publishing Year
Journal Title
Physical Review B
Volume
61
Issue
19
Article Number
13088
LibreCat-ID
Cite this
Meier T, Weiser S, Möbius J, et al. Disorder-induced Dephasing in Semiconductors. Physical Review B. 2000;61(19). doi:10.1103/PhysRevB.61.13088
Meier, T., Weiser, S., Möbius, J., Euteneuer, A., Mayer, E. J., Stolz, W., Hofmann, M., Rühle, W. W., Thomas, P., & Koch, S. W. (2000). Disorder-induced Dephasing in Semiconductors. Physical Review B, 61(19), Article 13088. https://doi.org/10.1103/PhysRevB.61.13088
@article{Meier_Weiser_Möbius_Euteneuer_Mayer_Stolz_Hofmann_Rühle_Thomas_Koch_2000, title={Disorder-induced Dephasing in Semiconductors}, volume={61}, DOI={10.1103/PhysRevB.61.13088}, number={1913088}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Weiser, S. and Möbius, J. and Euteneuer, A. and Mayer, E.J. and Stolz, W. and Hofmann, M. and Rühle, W.W. and Thomas, P. and Koch, S.W.}, year={2000} }
Meier, Torsten, S. Weiser, J. Möbius, A. Euteneuer, E.J. Mayer, W. Stolz, M. Hofmann, W.W. Rühle, P. Thomas, and S.W. Koch. “Disorder-Induced Dephasing in Semiconductors.” Physical Review B 61, no. 19 (2000). https://doi.org/10.1103/PhysRevB.61.13088.
T. Meier et al., “Disorder-induced Dephasing in Semiconductors,” Physical Review B, vol. 61, no. 19, Art. no. 13088, 2000, doi: 10.1103/PhysRevB.61.13088.
Meier, Torsten, et al. “Disorder-Induced Dephasing in Semiconductors.” Physical Review B, vol. 61, no. 19, 13088, American Physical Society, 2000, doi:10.1103/PhysRevB.61.13088.
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