In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy
V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011).
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Journal Article
| Published
| English
Author
Wiedemeier, V;
Berth, GerhardLibreCat;
Zrenner, ArturLibreCat 
;
Larramendi, E M;
Woggon, U;
Lischka, K;
Schikora, D
;
Larramendi, E M;
Woggon, U;
Lischka, K;
Schikora, DDepartment
Abstract
Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity with the increase of laser power density. The appearance of the peaks associated with the stronger crystalline-tellurium modes, tellurium aggregates and second-order Raman scattering at room temperature μ-Raman spectra was observed for higher power densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation damage and a fast formation of crystalline tellurium aggregates on the layer surface.
Publishing Year
Journal Title
Semiconductor Science and Technology
Volume
26
Issue
10
Article Number
105023
LibreCat-ID
Cite this
Wiedemeier V, Berth G, Zrenner A, et al. In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor Science and Technology. 2011;26(10). doi:10.1088/0268-1242/26/10/105023
Wiedemeier, V., Berth, G., Zrenner, A., Larramendi, E. M., Woggon, U., Lischka, K., & Schikora, D. (2011). In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor Science and Technology, 26(10). https://doi.org/10.1088/0268-1242/26/10/105023
@article{Wiedemeier_Berth_Zrenner_Larramendi_Woggon_Lischka_Schikora_2011, title={In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy}, volume={26}, DOI={10.1088/0268-1242/26/10/105023}, number={10105023}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi, E M and Woggon, U and Lischka, K and Schikora, D}, year={2011} }
Wiedemeier, V, Gerhard Berth, Artur Zrenner, E M Larramendi, U Woggon, K Lischka, and D Schikora. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” Semiconductor Science and Technology 26, no. 10 (2011). https://doi.org/10.1088/0268-1242/26/10/105023.
V. Wiedemeier et al., “In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy,” Semiconductor Science and Technology, vol. 26, no. 10, 2011.
Wiedemeier, V., et al. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” Semiconductor Science and Technology, vol. 26, no. 10, 105023, IOP Publishing, 2011, doi:10.1088/0268-1242/26/10/105023.
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