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12 Publications


2019 | Journal Article | LibreCat-ID: 12930
High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy
R. Köthemann, N. Weber, J.K.N. Lindner, C. Meier, Semiconductor Science and Technology 34 (2019).
LibreCat | DOI
 

2018 | Journal Article | LibreCat-ID: 7009
Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
LibreCat | DOI
 

2013 | Journal Article | LibreCat-ID: 7282
Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).
LibreCat | DOI
 

2013 | Journal Article | LibreCat-ID: 7295
On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures
E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D. Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013).
LibreCat | DOI
 

2011 | Journal Article | LibreCat-ID: 4545
In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy
V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011).
LibreCat | DOI
 

2010 | Journal Article | LibreCat-ID: 4549
Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).
LibreCat | DOI
 

2005 | Journal Article | LibreCat-ID: 8693
Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene
M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
LibreCat | DOI
 

2004 | Journal Article | LibreCat-ID: 8692
Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation
D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.
LibreCat | DOI
 

2003 | Journal Article | LibreCat-ID: 8730
Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope
G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739.
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 8768
Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 7684
Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping
D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589.
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 8747
Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat | DOI
 

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