Characterization of SiON integrated waveguides via FTIR and AFM measurements
T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, A. Zrenner, in: 2011 Semiconductor Conference Dresden, IEEE, 2011.
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Conference Paper
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Author
Frers, Torsten;
Hett, Thomas;
Hilleringmann, Ulrich;
Berth, GerhardLibreCat;
Widhalm, Alex;
Zrenner, ArturLibreCat 
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Abstract
Silicon oxynitride (SiON) layers for telecommunication device application are grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) for various gas compositions of SiH4, N2O and NH3. Processing and annealing effects on the oxynitride films were studied by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) measurements. By reduction of the silane (SiH4) gas flow and enhancement of the PECVD deposition temperature, the absorption loss due to NH bands can be nearly completely erased. Furthermore the surface roughness can be reduced by decreasing the gas flow and rising the deposition temperature. First waveguide structures are introduced and their characterization is presented.
Publishing Year
Proceedings Title
2011 Semiconductor Conference Dresden
Conference
2011 Semiconductor Conference Dresden
Conference Location
Dresden, Germany
Conference Date
2011-09-27 – 2011-09-28
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Cite this
Frers T, Hett T, Hilleringmann U, Berth G, Widhalm A, Zrenner A. Characterization of SiON integrated waveguides via FTIR and AFM measurements. In: 2011 Semiconductor Conference Dresden. IEEE; 2011. doi:10.1109/scd.2011.6068744
Frers, T., Hett, T., Hilleringmann, U., Berth, G., Widhalm, A., & Zrenner, A. (2011). Characterization of SiON integrated waveguides via FTIR and AFM measurements. In 2011 Semiconductor Conference Dresden. Dresden, Germany: IEEE. https://doi.org/10.1109/scd.2011.6068744
@inproceedings{Frers_Hett_Hilleringmann_Berth_Widhalm_Zrenner_2011, title={Characterization of SiON integrated waveguides via FTIR and AFM measurements}, DOI={10.1109/scd.2011.6068744}, booktitle={2011 Semiconductor Conference Dresden}, publisher={IEEE}, author={Frers, Torsten and Hett, Thomas and Hilleringmann, Ulrich and Berth, Gerhard and Widhalm, Alex and Zrenner, Artur}, year={2011} }
Frers, Torsten, Thomas Hett, Ulrich Hilleringmann, Gerhard Berth, Alex Widhalm, and Artur Zrenner. “Characterization of SiON Integrated Waveguides via FTIR and AFM Measurements.” In 2011 Semiconductor Conference Dresden. IEEE, 2011. https://doi.org/10.1109/scd.2011.6068744.
T. Frers, T. Hett, U. Hilleringmann, G. Berth, A. Widhalm, and A. Zrenner, “Characterization of SiON integrated waveguides via FTIR and AFM measurements,” in 2011 Semiconductor Conference Dresden, Dresden, Germany, 2011.
Frers, Torsten, et al. “Characterization of SiON Integrated Waveguides via FTIR and AFM Measurements.” 2011 Semiconductor Conference Dresden, IEEE, 2011, doi:10.1109/scd.2011.6068744.
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