Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning
D. Zhang, D. Sando, Y. Pan, P. Sharma, J. Seidel, Journal of Applied Physics 129 (2021).
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Journal Article
| Published
| English
Author
Zhang, Dawei;
Sando, Daniel;
Pan, YingLibreCat;
Sharma, Pankaj;
Seidel, Jan
Keywords
Publishing Year
Journal Title
Journal of Applied Physics
Volume
129
Issue
1
Article Number
014102
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Cite this
Zhang D, Sando D, Pan Y, Sharma P, Seidel J. Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning. Journal of Applied Physics. 2021;129(1). doi:10.1063/5.0029620
Zhang, D., Sando, D., Pan, Y., Sharma, P., & Seidel, J. (2021). Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning. Journal of Applied Physics, 129(1), Article 014102. https://doi.org/10.1063/5.0029620
@article{Zhang_Sando_Pan_Sharma_Seidel_2021, title={Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning}, volume={129}, DOI={10.1063/5.0029620}, number={1014102}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhang, Dawei and Sando, Daniel and Pan, Ying and Sharma, Pankaj and Seidel, Jan}, year={2021} }
Zhang, Dawei, Daniel Sando, Ying Pan, Pankaj Sharma, and Jan Seidel. “Robust Ferroelectric Polarization Retention in Harsh Environments through Engineered Domain Wall Pinning.” Journal of Applied Physics 129, no. 1 (2021). https://doi.org/10.1063/5.0029620.
D. Zhang, D. Sando, Y. Pan, P. Sharma, and J. Seidel, “Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning,” Journal of Applied Physics, vol. 129, no. 1, Art. no. 014102, 2021, doi: 10.1063/5.0029620.
Zhang, Dawei, et al. “Robust Ferroelectric Polarization Retention in Harsh Environments through Engineered Domain Wall Pinning.” Journal of Applied Physics, vol. 129, no. 1, 014102, AIP Publishing, 2021, doi:10.1063/5.0029620.
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