Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN
M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials & Interfaces 15 (2023) 39513–39522.
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Journal Article
| Published
| English
Author
Zscherp, Mario Fabian;
Jentsch, Silas Aurel;
Müller, Marius Johannes;
Lider, Vitalii;
Becker, Celina;
Chen, Limei;
Littmann, Mario;
Meier, Falco;
Beyer, Andreas;
Hofmann, Detlev Michael;
As, Donat JosefLibreCat ;
Klar, Peter Jens
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Journal Title
ACS Applied Materials & Interfaces
Volume
15
Issue
33
Page
39513-39522
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Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces. 2023;15(33):39513-39522. doi:10.1021/acsami.3c06319
Zscherp, M. F., Jentsch, S. A., Müller, M. J., Lider, V., Becker, C., Chen, L., Littmann, M., Meier, F., Beyer, A., Hofmann, D. M., As, D. J., Klar, P. J., Volz, K., Chatterjee, S., & Schörmann, J. (2023). Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces, 15(33), 39513–39522. https://doi.org/10.1021/acsami.3c06319
@article{Zscherp_Jentsch_Müller_Lider_Becker_Chen_Littmann_Meier_Beyer_Hofmann_et al._2023, title={Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN}, volume={15}, DOI={10.1021/acsami.3c06319}, number={33}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Zscherp, Mario Fabian and Jentsch, Silas Aurel and Müller, Marius Johannes and Lider, Vitalii and Becker, Celina and Chen, Limei and Littmann, Mario and Meier, Falco and Beyer, Andreas and Hofmann, Detlev Michael and et al.}, year={2023}, pages={39513–39522} }
Zscherp, Mario Fabian, Silas Aurel Jentsch, Marius Johannes Müller, Vitalii Lider, Celina Becker, Limei Chen, Mario Littmann, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.” ACS Applied Materials & Interfaces 15, no. 33 (2023): 39513–22. https://doi.org/10.1021/acsami.3c06319.
M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN,” ACS Applied Materials & Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi: 10.1021/acsami.3c06319.
Zscherp, Mario Fabian, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.” ACS Applied Materials & Interfaces, vol. 15, no. 33, American Chemical Society (ACS), 2023, pp. 39513–22, doi:10.1021/acsami.3c06319.