Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures

L.K.S. Herval, M.P.F. de Godoy, T. Wecker, D.J. As, Journal of Luminescence 198 (2018) 309–313.

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Journal of Luminescence
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198
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309-313
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Herval LKS, de Godoy MPF, Wecker T, As DJ. Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. Journal of Luminescence. 2018;198:309-313. doi:10.1016/j.jlumin.2018.02.051
Herval, L. K. S., de Godoy, M. P. F., Wecker, T., & As, D. J. (2018). Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. Journal of Luminescence, 198, 309–313. https://doi.org/10.1016/j.jlumin.2018.02.051
@article{Herval_de Godoy_Wecker_As_2018, title={Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures}, volume={198}, DOI={10.1016/j.jlumin.2018.02.051}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herval, Leonilson K.S. and de Godoy, Marcio P.F. and Wecker, Tobias and As, Donat Josef}, year={2018}, pages={309–313} }
Herval, Leonilson K.S., Marcio P.F. de Godoy, Tobias Wecker, and Donat Josef As. “Investigation on Interface-Related Defects by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.” Journal of Luminescence 198 (2018): 309–13. https://doi.org/10.1016/j.jlumin.2018.02.051.
L. K. S. Herval, M. P. F. de Godoy, T. Wecker, and D. J. As, “Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures,” Journal of Luminescence, vol. 198, pp. 309–313, 2018.
Herval, Leonilson K. S., et al. “Investigation on Interface-Related Defects by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.” Journal of Luminescence, vol. 198, Elsevier BV, 2018, pp. 309–13, doi:10.1016/j.jlumin.2018.02.051.

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