Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 481 (2017) 7–10.
Download
No fulltext has been uploaded.
Journal Article
| Published
| English
Author
Ritzmann, Julian;
Schott, Rüdiger;
Gross, Katherine;
Reuter, DirkLibreCat;
Ludwig, Arne;
Wieck, Andreas D.
Publishing Year
Journal Title
Journal of Crystal Growth
Volume
481
Page
7-10
ISSN
LibreCat-ID
Cite this
Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD. Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth. 2017;481:7-10. doi:10.1016/j.jcrysgro.2017.10.029
Ritzmann, J., Schott, R., Gross, K., Reuter, D., Ludwig, A., & Wieck, A. D. (2017). Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth, 481, 7–10. https://doi.org/10.1016/j.jcrysgro.2017.10.029
@article{Ritzmann_Schott_Gross_Reuter_Ludwig_Wieck_2017, title={Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy}, volume={481}, DOI={10.1016/j.jcrysgro.2017.10.029}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Ritzmann, Julian and Schott, Rüdiger and Gross, Katherine and Reuter, Dirk and Ludwig, Arne and Wieck, Andreas D.}, year={2017}, pages={7–10} }
Ritzmann, Julian, Rüdiger Schott, Katherine Gross, Dirk Reuter, Arne Ludwig, and Andreas D. Wieck. “Overcoming Ehrlich-Schwöbel Barrier in (1 1 1)A GaAs Molecular Beam Epitaxy.” Journal of Crystal Growth 481 (2017): 7–10. https://doi.org/10.1016/j.jcrysgro.2017.10.029.
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, and A. D. Wieck, “Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy,” Journal of Crystal Growth, vol. 481, pp. 7–10, 2017.
Ritzmann, Julian, et al. “Overcoming Ehrlich-Schwöbel Barrier in (1 1 1)A GaAs Molecular Beam Epitaxy.” Journal of Crystal Growth, vol. 481, Elsevier BV, 2017, pp. 7–10, doi:10.1016/j.jcrysgro.2017.10.029.
Google Scholar