Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy

J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 481 (2017) 7–10.

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Journal Article | Published | English
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Journal of Crystal Growth
Volume
481
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7-10
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Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD. Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth. 2017;481:7-10. doi:10.1016/j.jcrysgro.2017.10.029
Ritzmann, J., Schott, R., Gross, K., Reuter, D., Ludwig, A., & Wieck, A. D. (2017). Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth, 481, 7–10. https://doi.org/10.1016/j.jcrysgro.2017.10.029
@article{Ritzmann_Schott_Gross_Reuter_Ludwig_Wieck_2017, title={Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy}, volume={481}, DOI={10.1016/j.jcrysgro.2017.10.029}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Ritzmann, Julian and Schott, Rüdiger and Gross, Katherine and Reuter, Dirk and Ludwig, Arne and Wieck, Andreas D.}, year={2017}, pages={7–10} }
Ritzmann, Julian, Rüdiger Schott, Katherine Gross, Dirk Reuter, Arne Ludwig, and Andreas D. Wieck. “Overcoming Ehrlich-Schwöbel Barrier in (1 1 1)A GaAs Molecular Beam Epitaxy.” Journal of Crystal Growth 481 (2017): 7–10. https://doi.org/10.1016/j.jcrysgro.2017.10.029.
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, and A. D. Wieck, “Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy,” Journal of Crystal Growth, vol. 481, pp. 7–10, 2017.
Ritzmann, Julian, et al. “Overcoming Ehrlich-Schwöbel Barrier in (1 1 1)A GaAs Molecular Beam Epitaxy.” Journal of Crystal Growth, vol. 481, Elsevier BV, 2017, pp. 7–10, doi:10.1016/j.jcrysgro.2017.10.029.

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