Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures

V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.

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Journal Article | Published | English
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Microelectronic Engineering
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180
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35-39
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Zolatanosha V, Reuter D. Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. Microelectronic Engineering. 2017;180:35-39. doi:10.1016/j.mee.2017.05.053
Zolatanosha, V., & Reuter, D. (2017). Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. Microelectronic Engineering, 180, 35–39. https://doi.org/10.1016/j.mee.2017.05.053
@article{Zolatanosha_Reuter_2017, title={Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures}, volume={180}, DOI={10.1016/j.mee.2017.05.053}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Zolatanosha, Viktoryia and Reuter, Dirk}, year={2017}, pages={35–39} }
Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” Microelectronic Engineering 180 (2017): 35–39. https://doi.org/10.1016/j.mee.2017.05.053.
V. Zolatanosha and D. Reuter, “Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures,” Microelectronic Engineering, vol. 180, pp. 35–39, 2017.
Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” Microelectronic Engineering, vol. 180, Elsevier BV, 2017, pp. 35–39, doi:10.1016/j.mee.2017.05.053.

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