Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles

Nienhaus, H., Kravets, V., Koutouzov, S., Meier, C., Lorke, A., Wiggers, H., … Kruis, F. E. (2006). Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 24(3). https://doi.org/10.1116/1.2190658

@article{Nienhaus_Kravets_Koutouzov_Meier_Lorke_Wiggers_Kennedy_Kruis_2006, title={Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles}, volume={24}, DOI={10.1116/1.2190658}, number={31156}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures}, publisher={American Vacuum Society}, author={Nienhaus, H. and Kravets, V. and Koutouzov, S. and Meier, Cedrik and Lorke, A. and Wiggers, H. and Kennedy, M. K. and Kruis, F. E.}, year={2006} }

Nienhaus, H., V. Kravets, S. Koutouzov, Cedrik Meier, A. Lorke, H. Wiggers, M. K. Kennedy, and F. E. Kruis. “Quantum Size Effect of Valence Band Plasmon Energies in Si and SnO[Sub x] Nanoparticles.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, no. 3 (2006). https://doi.org/10.1116/1.2190658.

H. Nienhaus et al., “Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 3, 2006.

Nienhaus, H., et al. “Quantum Size Effect of Valence Band Plasmon Energies in Si and SnO[Sub x] Nanoparticles.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 3, 1156, American Vacuum Society, 2006, doi:10.1116/1.2190658.