Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures
C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics 93 (2003) 6100–6106.
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Journal Article
| Published
| English
Author
Meier, CedrikLibreCat 
;
Reuter, Dirk;
Riedesel, Christof;
Wieck, Andreas D.
;
Reuter, Dirk;
Riedesel, Christof;
Wieck, Andreas D.Department
Publishing Year
Journal Title
Journal of Applied Physics
Volume
93
Issue
10
Page
6100-6106
LibreCat-ID
Cite this
Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics. 2003;93(10):6100-6106. doi:10.1063/1.1563032
Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics, 93(10), 6100–6106. https://doi.org/10.1063/1.1563032
@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}, volume={93}, DOI={10.1063/1.1563032}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }
Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics 93, no. 10 (2003): 6100–6106. https://doi.org/10.1063/1.1563032.
C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures,” Journal of Applied Physics, vol. 93, no. 10, pp. 6100–6106, 2003.
Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics, vol. 93, no. 10, AIP Publishing, 2003, pp. 6100–06, doi:10.1063/1.1563032.
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