Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping
D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589.
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| English
Author
Reuter, D;
Meier, CedrikLibreCat 
;
Riedesel, C;
Wieck, A D
;
Riedesel, C;
Wieck, A DDepartment
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Journal Title
Semiconductor Science and Technology
Volume
17
Issue
6
Page
585-589
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LibreCat-ID
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Reuter D, Meier C, Riedesel C, Wieck AD. Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology. 2002;17(6):585-589. doi:10.1088/0268-1242/17/6/315
Reuter, D., Meier, C., Riedesel, C., & Wieck, A. D. (2002). Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology, 17(6), 585–589. https://doi.org/10.1088/0268-1242/17/6/315
@article{Reuter_Meier_Riedesel_Wieck_2002, title={Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping}, volume={17}, DOI={10.1088/0268-1242/17/6/315}, number={6}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D}, year={2002}, pages={585–589} }
Reuter, D, Cedrik Meier, C Riedesel, and A D Wieck. “Local Two-Dimensional Electron Gas Formation in p-Doped GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures by Focused Si-Implantation Doping.” Semiconductor Science and Technology 17, no. 6 (2002): 585–89. https://doi.org/10.1088/0268-1242/17/6/315.
D. Reuter, C. Meier, C. Riedesel, and A. D. Wieck, “Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping,” Semiconductor Science and Technology, vol. 17, no. 6, pp. 585–589, 2002.
Reuter, D., et al. “Local Two-Dimensional Electron Gas Formation in p-Doped GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures by Focused Si-Implantation Doping.” Semiconductor Science and Technology, vol. 17, no. 6, IOP Publishing, 2002, pp. 585–89, doi:10.1088/0268-1242/17/6/315.
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