Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots

M. Richter, D. Reuter, J.-Y. Duboz, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2007) 1891–1893.

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Journal Article | Published | English
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Physica E: Low-dimensional Systems and Nanostructures
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1891-1893
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Richter M, Reuter D, Duboz J-Y, Wieck AD. Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots. Physica E: Low-dimensional Systems and Nanostructures. 2007:1891-1893. doi:10.1016/j.physe.2007.08.091
Richter, M., Reuter, D., Duboz, J.-Y., & Wieck, A. D. (2007). Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots. Physica E: Low-Dimensional Systems and Nanostructures, 1891–1893. https://doi.org/10.1016/j.physe.2007.08.091
@article{Richter_Reuter_Duboz_Wieck_2007, title={Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots}, DOI={10.1016/j.physe.2007.08.091}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Richter, Mirja and Reuter, Dirk and Duboz, Jean-Yves and Wieck, Andreas D.}, year={2007}, pages={1891–1893} }
Richter, Mirja, Dirk Reuter, Jean-Yves Duboz, and Andreas D. Wieck. “Influence of In0.15Ga0.85As Capping Layers on the Electron and Hole Energy Levels of InAs Quantum Dots.” Physica E: Low-Dimensional Systems and Nanostructures, 2007, 1891–93. https://doi.org/10.1016/j.physe.2007.08.091.
M. Richter, D. Reuter, J.-Y. Duboz, and A. D. Wieck, “Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots,” Physica E: Low-dimensional Systems and Nanostructures, pp. 1891–1893, 2007.
Richter, Mirja, et al. “Influence of In0.15Ga0.85As Capping Layers on the Electron and Hole Energy Levels of InAs Quantum Dots.” Physica E: Low-Dimensional Systems and Nanostructures, 2007, pp. 1891–93, doi:10.1016/j.physe.2007.08.091.

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