Germanium doping of cubic GaN grown by molecular beam epitaxy
M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).
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| English
Author
Deppe, M.;
Gerlach, J. W.;
Shvarkov, S.;
Rogalla, D.;
Becker, H.-W.;
Reuter, DirkLibreCat;
As, Donat JosefLibreCat 
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Publishing Year
Journal Title
Journal of Applied Physics
Article Number
095703
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Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. 2019. doi:10.1063/1.5066095
Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter, D., & As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. https://doi.org/10.1063/1.5066095
@article{Deppe_Gerlach_Shvarkov_Rogalla_Becker_Reuter_As_2019, title={Germanium doping of cubic GaN grown by molecular beam epitaxy}, DOI={10.1063/1.5066095}, number={095703}, journal={Journal of Applied Physics}, author={Deppe, M. and Gerlach, J. W. and Shvarkov, S. and Rogalla, D. and Becker, H.-W. and Reuter, Dirk and As, Donat Josef}, year={2019} }
Deppe, M., J. W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, Dirk Reuter, and Donat Josef As. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” Journal of Applied Physics, 2019. https://doi.org/10.1063/1.5066095.
M. Deppe et al., “Germanium doping of cubic GaN grown by molecular beam epitaxy,” Journal of Applied Physics, 2019.
Deppe, M., et al. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” Journal of Applied Physics, 095703, 2019, doi:10.1063/1.5066095.
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