Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)

J.L. Yang, D. Reuter, A.D. Wieck, Journal of Crystal Growth (2006) 278–284.

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Journal Article | Published | English
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Journal of Crystal Growth
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278-284
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Yang JL, Reuter D, Wieck AD. Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth. 2006:278-284. doi:10.1016/j.jcrysgro.2006.05.051
Yang, J. L., Reuter, D., & Wieck, A. D. (2006). Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth, 278–284. https://doi.org/10.1016/j.jcrysgro.2006.05.051
@article{Yang_Reuter_Wieck_2006, title={Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)}, DOI={10.1016/j.jcrysgro.2006.05.051}, journal={Journal of Crystal Growth}, author={Yang, J.L. and Reuter, Dirk and Wieck, A.D.}, year={2006}, pages={278–284} }
Yang, J.L., Dirk Reuter, and A.D. Wieck. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” Journal of Crystal Growth, 2006, 278–84. https://doi.org/10.1016/j.jcrysgro.2006.05.051.
J. L. Yang, D. Reuter, and A. D. Wieck, “Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100),” Journal of Crystal Growth, pp. 278–284, 2006.
Yang, J. L., et al. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” Journal of Crystal Growth, 2006, pp. 278–84, doi:10.1016/j.jcrysgro.2006.05.051.

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