Single-hole transistor in p-type GaAs∕AlGaAs heterostructures

B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2005).

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Journal Article | Published | English
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Applied Physics Letters
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232108
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Grbić B, Leturcq R, Ensslin K, Reuter D, Wieck AD. Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. 2005. doi:10.1063/1.2139994
Grbić, B., Leturcq, R., Ensslin, K., Reuter, D., & Wieck, A. D. (2005). Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. https://doi.org/10.1063/1.2139994
@article{Grbić_Leturcq_Ensslin_Reuter_Wieck_2005, title={Single-hole transistor in p-type GaAs∕AlGaAs heterostructures}, DOI={10.1063/1.2139994}, number={232108}, journal={Applied Physics Letters}, author={Grbić, Boris and Leturcq, Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }
Grbić, Boris, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, and Andreas D. Wieck. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2139994.
B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole transistor in p-type GaAs∕AlGaAs heterostructures,” Applied Physics Letters, 2005.
Grbić, Boris, et al. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied Physics Letters, 232108, 2005, doi:10.1063/1.2139994.

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