Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure
D. Reuter, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 872–875.
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Author
Reuter, DirkLibreCat;
Seekamp, A;
Wieck, A.D
Publishing Year
Journal Title
Physica E: Low-dimensional Systems and Nanostructures
Page
872-875
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LibreCat-ID
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Reuter D, Seekamp A, Wieck A. Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure. Physica E: Low-dimensional Systems and Nanostructures. 2004:872-875. doi:10.1016/j.physe.2003.11.141
Reuter, D., Seekamp, A., & Wieck, A. . (2004). Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure. Physica E: Low-Dimensional Systems and Nanostructures, 872–875. https://doi.org/10.1016/j.physe.2003.11.141
@article{Reuter_Seekamp_Wieck_2004, title={Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure}, DOI={10.1016/j.physe.2003.11.141}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Seekamp, A and Wieck, A.D}, year={2004}, pages={872–875} }
Reuter, Dirk, A Seekamp, and A.D Wieck. “Fabrication of Two-Dimensional n- and p-Type in-Plane Gate Transistors from the Same p-Doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As Heterostructure.” Physica E: Low-Dimensional Systems and Nanostructures, 2004, 872–75. https://doi.org/10.1016/j.physe.2003.11.141.
D. Reuter, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure,” Physica E: Low-dimensional Systems and Nanostructures, pp. 872–875, 2004.
Reuter, Dirk, et al. “Fabrication of Two-Dimensional n- and p-Type in-Plane Gate Transistors from the Same p-Doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As Heterostructure.” Physica E: Low-Dimensional Systems and Nanostructures, 2004, pp. 872–75, doi:10.1016/j.physe.2003.11.141.
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