Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures
D. Reuter, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, W. Hansen, Physica E: Low-Dimensional Systems and Nanostructures (2004) 725–728.
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Journal Article
| Published
| English
Author
Reuter, DirkLibreCat;
Werner, C.;
Riedesel, C.;
Wieck, A.D.;
Schuster, D.;
Hansen, W.
Publishing Year
Journal Title
Physica E: Low-dimensional Systems and Nanostructures
Page
725-728
ISSN
LibreCat-ID
Cite this
Reuter D, Werner C, Riedesel C, Wieck AD, Schuster D, Hansen W. Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures. Physica E: Low-dimensional Systems and Nanostructures. 2004:725-728. doi:10.1016/j.physe.2003.12.109
Reuter, D., Werner, C., Riedesel, C., Wieck, A. D., Schuster, D., & Hansen, W. (2004). Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures. Physica E: Low-Dimensional Systems and Nanostructures, 725–728. https://doi.org/10.1016/j.physe.2003.12.109
@article{Reuter_Werner_Riedesel_Wieck_Schuster_Hansen_2004, title={Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures}, DOI={10.1016/j.physe.2003.12.109}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Werner, C. and Riedesel, C. and Wieck, A.D. and Schuster, D. and Hansen, W.}, year={2004}, pages={725–728} }
Reuter, Dirk, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, and W. Hansen. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” Physica E: Low-Dimensional Systems and Nanostructures, 2004, 725–28. https://doi.org/10.1016/j.physe.2003.12.109.
D. Reuter, C. Werner, C. Riedesel, A. D. Wieck, D. Schuster, and W. Hansen, “Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures,” Physica E: Low-dimensional Systems and Nanostructures, pp. 725–728, 2004.
Reuter, Dirk, et al. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” Physica E: Low-Dimensional Systems and Nanostructures, 2004, pp. 725–28, doi:10.1016/j.physe.2003.12.109.
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