Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction

L. Bryja, M. Kubisa, K. Ryczko, J. Misiewicz, R. Stȩpniewski, M. Byszewski, M. Potemski, D. Reuter, A. Wieck, Physica B: Condensed Matter (2004) 442–445.

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Journal Article | Published | English
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Bryja, L.; Kubisa, M.; Ryczko, K.; Misiewicz, J.; Stȩpniewski, R.; Byszewski, M.; Potemski, M.; Reuter, DirkLibreCat; Wieck, A.
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Physica B: Condensed Matter
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442-445
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Bryja L, Kubisa M, Ryczko K, et al. Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction. Physica B: Condensed Matter. 2004:442-445. doi:10.1016/j.physb.2004.01.123
Bryja, L., Kubisa, M., Ryczko, K., Misiewicz, J., Stȩpniewski, R., Byszewski, M., … Wieck, A. (2004). Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction. Physica B: Condensed Matter, 442–445. https://doi.org/10.1016/j.physb.2004.01.123
@article{Bryja_Kubisa_Ryczko_Misiewicz_Stȩpniewski_Byszewski_Potemski_Reuter_Wieck_2004, title={Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction}, DOI={10.1016/j.physb.2004.01.123}, journal={Physica B: Condensed Matter}, author={Bryja, L. and Kubisa, M. and Ryczko, K. and Misiewicz, J. and Stȩpniewski, R. and Byszewski, M. and Potemski, M. and Reuter, Dirk and Wieck, A.}, year={2004}, pages={442–445} }
Bryja, L., M. Kubisa, K. Ryczko, J. Misiewicz, R. Stȩpniewski, M. Byszewski, M. Potemski, Dirk Reuter, and A. Wieck. “Magnetic-Field-Induced Excitons in Photoluminescence from Heavily Doped p-Type Ga1−xAlxAs/GaAs Single Heterojunction.” Physica B: Condensed Matter, 2004, 442–45. https://doi.org/10.1016/j.physb.2004.01.123.
L. Bryja et al., “Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction,” Physica B: Condensed Matter, pp. 442–445, 2004.
Bryja, L., et al. “Magnetic-Field-Induced Excitons in Photoluminescence from Heavily Doped p-Type Ga1−xAlxAs/GaAs Single Heterojunction.” Physica B: Condensed Matter, 2004, pp. 442–45, doi:10.1016/j.physb.2004.01.123.

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