In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams

A. Ebbers, D. Reuter, M. Heuken, A.D. Wieck, Superlattices and Microstructures (2004) 381–388.

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Journal Article | Published | English
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Superlattices and Microstructures
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381-388
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Ebbers A, Reuter D, Heuken M, Wieck AD. In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams. Superlattices and Microstructures. 2004:381-388. doi:10.1016/j.spmi.2004.02.012
Ebbers, A., Reuter, D., Heuken, M., & Wieck, A. D. (2004). In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams. Superlattices and Microstructures, 381–388. https://doi.org/10.1016/j.spmi.2004.02.012
@article{Ebbers_Reuter_Heuken_Wieck_2004, title={In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams}, DOI={10.1016/j.spmi.2004.02.012}, journal={Superlattices and Microstructures}, author={Ebbers, A. and Reuter, Dirk and Heuken, M. and Wieck, A.D.}, year={2004}, pages={381–388} }
Ebbers, A., Dirk Reuter, M. Heuken, and A.D. Wieck. “In-Plane Gate Transistors in AlxGa1−xN/GaN Heterostructures Written by Focused Ion Beams.” Superlattices and Microstructures, 2004, 381–88. https://doi.org/10.1016/j.spmi.2004.02.012.
A. Ebbers, D. Reuter, M. Heuken, and A. D. Wieck, “In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams,” Superlattices and Microstructures, pp. 381–388, 2004.
Ebbers, A., et al. “In-Plane Gate Transistors in AlxGa1−xN/GaN Heterostructures Written by Focused Ion Beams.” Superlattices and Microstructures, 2004, pp. 381–88, doi:10.1016/j.spmi.2004.02.012.

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