Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping

D. Reuter, C. Meier, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 13 (2002) 938–941.

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Journal Article | Published | English
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Journal Title
Physica E: Low-dimensional Systems and Nanostructures
Volume
13
Page
938-941
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Reuter D, Meier C, Seekamp A, Wieck A. Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. Physica E: Low-dimensional Systems and Nanostructures. 2002;13:938-941. doi:10.1016/s1386-9477(02)00239-4
Reuter, D., Meier, C., Seekamp, A., & Wieck, A. . (2002). Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. Physica E: Low-Dimensional Systems and Nanostructures, 13, 938–941. https://doi.org/10.1016/s1386-9477(02)00239-4
@article{Reuter_Meier_Seekamp_Wieck_2002, title={Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping}, volume={13}, DOI={10.1016/s1386-9477(02)00239-4}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Meier, Cedrik and Seekamp, A and Wieck, A.D}, year={2002}, pages={938–941} }
Reuter, Dirk, Cedrik Meier, A Seekamp, and A.D Wieck. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” Physica E: Low-Dimensional Systems and Nanostructures 13 (2002): 938–41. https://doi.org/10.1016/s1386-9477(02)00239-4.
D. Reuter, C. Meier, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping,” Physica E: Low-dimensional Systems and Nanostructures, vol. 13, pp. 938–941, 2002.
Reuter, Dirk, et al. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” Physica E: Low-Dimensional Systems and Nanostructures, vol. 13, 2002, pp. 938–41, doi:10.1016/s1386-9477(02)00239-4.

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