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91 Publications


2001 | Journal Article | LibreCat-ID: 8767
Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters. 2001;79:377-379. doi:10.1063/1.1386618
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2000 | Journal Article | LibreCat-ID: 7690
Heidtkamp C, Meier C, Reuter D, et al. Tunable backscattering in quantum Hall systems induced by neighbouring gates. Physica B: Condensed Matter. 2000;284-288:1728-1729. doi:10.1016/s0921-4526(99)02892-6
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2000 | Journal Article | LibreCat-ID: 7691
Diaconescu D, Hoch S, Heidtkamp C, Meier C, Reuter D, Wieck AD. A new peak in the bend resistance of a four-terminal device written by FIB implantation. Physica B: Condensed Matter. 2000;284-288:1906-1907. doi:10.1016/s0921-4526(99)03002-1
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2000 | Conference Paper | LibreCat-ID: 7692
Reuter D, Meier C, Alvarez MA, Koch J, Wieck AD. Laterally resolved doping by focused ion beam implantation. In: IECON Proc. . ; 2000:1878.
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1999 | Journal Article | LibreCat-ID: 7693
Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. Journal of Applied Physics. 1999;86(11):6605-6607. doi:10.1063/1.371720
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1998 | Journal Article | LibreCat-ID: 7694
Tscheuschner RD, Hoch S, Leschinsky E, Meier C, Theis S, Wieck AD. Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control Management of III–V Molecular Beam Epitaxy. International Journal of Modern Physics B. 1998;12(11):1147-1170. doi:10.1142/s0217979298000636
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