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1023 Publications


2002 | Journal Article | LibreCat-ID: 8743
Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Reuter, D., Wieck, A. D., & Döhler, G. H. (2002). Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam. Physica E: Low-Dimensional Systems and Nanostructures, 143–146. https://doi.org/10.1016/s1386-9477(01)00506-9
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2002 | Journal Article | LibreCat-ID: 8744
Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Koch, J., Reuter, D., … Döhler, G. H. (2002). A novel photoconductive detector for single photon detection. Physica E: Low-Dimensional Systems and Nanostructures, 570–573. https://doi.org/10.1016/s1386-9477(01)00475-1
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2002 | Journal Article | LibreCat-ID: 8745
Versen, M., Schmidt, K. H., Bock, C., Reuter, D., Wieck, A. D., & Kunze, U. (2002). Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential. Physica Status Solidi (B), 669–673. https://doi.org/10.1002/(sici)1521-3951(200104)224:3<669::aid-pssb669>3.3.co;2-h
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2002 | Journal Article | LibreCat-ID: 8746
Reuter, D., Meier, C., Álvarez, M. A. S., & Wieck, A. D. (2002). Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters, 377–379. https://doi.org/10.1063/1.1386618
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 8747
Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 8763
Reuter, D., Versen, M., Schneider, M. D., & Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics, 321–325. https://doi.org/10.1063/1.373660
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2002 | Journal Article | LibreCat-ID: 8768
Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
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2002 | Journal Article | LibreCat-ID: 8771
Gershenson, M. E., Khavin, Y. B., Reuter, D., Schafmeister, P., & Wieck, A. D. (2002). Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length. Physical Review Letters, 1718–1721. https://doi.org/10.1103/physrevlett.85.1718
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2002 | Journal Article | LibreCat-ID: 8772
Versen, M., Klehn, B., Kunze, U., Reuter, D., & Wieck, A. . (2002). Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope. Ultramicroscopy, 159–163. https://doi.org/10.1016/s0304-3991(99)00127-8
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2002 | Journal Article | LibreCat-ID: 8773
Skaberna, S., Versen, M., Klehn, B., Kunze, U., Reuter, D., & D. Wieck, A. (2002). Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching. Ultramicroscopy, 153–157. https://doi.org/10.1016/s0304-3991(99)00126-6
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