Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities
D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics (2002) 321–325.
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Reuter, DirkLibreCat;
Versen, M.;
Schneider, M. D.;
Wieck, A. D.
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Journal of Applied Physics
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321-325
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Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics. 2002:321-325. doi:10.1063/1.373660
Reuter, D., Versen, M., Schneider, M. D., & Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics, 321–325. https://doi.org/10.1063/1.373660
@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities}, DOI={10.1063/1.373660}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }
Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” Journal of Applied Physics, 2002, 321–25. https://doi.org/10.1063/1.373660.
D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities,” Journal of Applied Physics, pp. 321–325, 2002.
Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” Journal of Applied Physics, 2002, pp. 321–25, doi:10.1063/1.373660.
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