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4538 Publications


2010 | Journal Article | LibreCat-ID: 4550
An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode
M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).
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2010 | Journal Article | LibreCat-ID: 4551
Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode
M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos, T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2749–2752.
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2010 | Journal Article | LibreCat-ID: 4552
Resonant photocurrent-spectroscopy of individual CdSe quantum dots
M. Panfilova, S. Michaelis de Vasconcellos, A. Pawlis, K. Lischka, A. Zrenner, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2521–2523.
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2010 | Conference Paper | LibreCat-ID: 7251
Extremely low-loss slow-light modes in plasmonic dielectric hybrid systems
A. Ishikawa, R.F. Oulton, T. Zentgraf, X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.
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2010 | Conference Paper | LibreCat-ID: 7252
Semiconductor plasmon laser
V.J. Sorger, R.F. Oulton, T. Zentgraf, R. Ma, C. Gladden, L. Dai, G. Bartal, X. Zhang, in: M.I. Stockman (Ed.), Plasmonics: Metallic Nanostructures and Their Optical Properties VIII, SPIE, 2010.
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2010 | Journal Article | LibreCat-ID: 7494
Controlled Etching Behavior of O-Polar and Zn-Polar ZnO Single Crystals
M. Mehta, C. Meier, Journal of The Electrochemical Society 158 (2010).
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2010 | Journal Article | LibreCat-ID: 7496
Electroluminescence from silicon nanoparticles fabricated from the gas phase
J. Theis, M. Geller, A. Lorke, H. Wiggers, A. Wieck, C. Meier, Nanotechnology 21 (2010).
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2010 | Journal Article | LibreCat-ID: 4129
Phonon-mediated relaxation in doped quantum dot molecules
A. Grodecka-Grad, J. Förstner, Journal of Physics: Conference Series 245 (2010).
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2010 | Journal Article | LibreCat-ID: 4144
Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4153
Plasma modification of nanosphere lithography masks made of polystyrene beads
D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.
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2010 | Journal Article | LibreCat-ID: 4174 | OA
Theory of phonon-mediated relaxation in doped quantum dot molecules
A. Grodecka-Grad, J. Förstner, Physical Review B 81 (2010).
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2010 | Journal Article | LibreCat-ID: 4194
Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)
E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4200
Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers
V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V. Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B 82 (2010).
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4202
Characterization of unintentional doping in nonpolar GaN
T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4204
Defects in carbon implanted silicon calculated by classical potentials and first-principles methods
F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).
LibreCat | Files available | DOI
 

2010 | Conference Abstract | LibreCat-ID: 4206 LibreCat
 

2010 | Book (Editor) | LibreCat-ID: 4207
Ion Beams and Nano-Engineering
D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.
LibreCat
 

2010 | Journal Article | LibreCat-ID: 4208
Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers
M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal of Physics: Conference Series 209 (2010).
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4210
Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer
M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4212
Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth
M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).
LibreCat | Files available | DOI
 

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