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110 Publications


2006 | Journal Article | LibreCat-ID: 8654
Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057
LibreCat | DOI
 

2006 | Journal Article | LibreCat-ID: 8665
Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by lateral electric fields. Applied Physics Letters. 2006. doi:10.1063/1.2345233
LibreCat | DOI
 

2006 | Journal Article | LibreCat-ID: 8671
Hohage PE, Bacher G, Reuter D, Wieck AD. Coherent spin oscillations in bulk GaAs at room temperature. Applied Physics Letters. 2006. doi:10.1063/1.2398909
LibreCat | DOI
 

2006 | Journal Article | LibreCat-ID: 29684
Thomas A, Meyners D, Ebke D, et al. Inverted spin polarization of Heusler alloys for spintronic devices. Applied Physics Letters. 2006;89(1). doi:10.1063/1.2219333
LibreCat | DOI
 

2005 | Journal Article | LibreCat-ID: 7653
Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities. Applied Physics Letters. 2005;87(24). doi:10.1063/1.2147713
LibreCat | DOI
 

2005 | Journal Article | LibreCat-ID: 7654
Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters. 2005;87(16). doi:10.1063/1.2112192
LibreCat | DOI
 

2005 | Journal Article | LibreCat-ID: 7655
David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. Applied Physics Letters. 2005;87(10). doi:10.1063/1.2039987
LibreCat | DOI
 

2005 | Journal Article | LibreCat-ID: 7656
Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. Applied Physics Letters. 2005;87(5). doi:10.1063/1.2008380
LibreCat | DOI
 

2005 | Journal Article | LibreCat-ID: 7659
Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters. 2005;86(3). doi:10.1063/1.1851007
LibreCat | DOI
 

2005 | Journal Article | LibreCat-ID: 8679
Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters. 2005. doi:10.1063/1.1897829
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