Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit, P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters, 86(3). https://doi.org/10.1063/1.1851007

@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005, title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={10.1063/1.1851007}, number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura, Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }

Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck, and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1851007.

A. Chakraborty et al., “Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied Physics Letters, vol. 86, no. 3, 2005.

Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics Letters, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:10.1063/1.1851007.