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32 Publications
2023 | Journal Article | LibreCat-ID: 46132
M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,” physica status solidi (b), vol. 260, no. 7, 2023, doi: 10.1002/pssb.202300034.
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2022 | Journal Article | LibreCat-ID: 35232
F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no. 2200508, 2022, doi: 10.1002/pssb.202200508.
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2022 | Journal Article | LibreCat-ID: 54849
A. L. Kozub, U. Gerstmann, and W. G. Schmidt, “Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons,” physica status solidi (b), vol. 260, no. 2, 2022, doi: 10.1002/pssb.202200453.
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2022 | Journal Article | LibreCat-ID: 37656
L. J. Glahn et al., “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties,” physica status solidi (b), vol. 259, no. 11, Art. no. 2200308, 2022, doi: 10.1002/pssb.202200308.
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2021 | Journal Article | LibreCat-ID: 40244
L. Meier and W. G. Schmidt, “GaInP/AlInP(001) Interfaces from Density Functional Theory,” physica status solidi (b), vol. 259, no. 1, Art. no. 2100462, 2021, doi: 10.1002/pssb.202100462.
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2020 | Journal Article | LibreCat-ID: 40233
L. Meier, C. Braun, T. Hannappel, and W. G. Schmidt, “Band Alignment at Ga x In 1– x P/Al y In 1– y P Alloy Interfaces from Hybrid Density Functional Theory Calculations,” physica status solidi (b), vol. 258, no. 2, Art. no. 2000463, 2020, doi: 10.1002/pssb.202000463.
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2019 | Journal Article | LibreCat-ID: 15444 |

M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N,” physica status solidi (b), Art. no. 1900532, 2019, doi: 10.1002/pssb.201900532.
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2018 | Journal Article | LibreCat-ID: 17065
N. Esser and W. G. Schmidt, “Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution,” physica status solidi (b), no. 256, Art. no. 1800314, 2018, doi: 10.1002/pssb.201800314.
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2010 | Journal Article | LibreCat-ID: 4210
M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” physica status solidi (b), vol. 247, no. 7, pp. 1753–1756, 2010.
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2006 | Journal Article | LibreCat-ID: 29686
A. Ehresmann et al., “Fundamentals for magnetic patterning by ion bombardment of exchange bias layer systems,” physica status solidi (b), vol. 243, no. 1, pp. 29–36, 2006, doi: 10.1002/pssb.200562442.
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