Characterization of submicron NMOS devices due to visible light emission
I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366.
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Journal Article
| Published
| English
Author
Schönstein, I.;
Müller, J.;
Hilleringmann, UlrichLibreCat;
Goser, K.
Department
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Journal Title
Microelectronic Engineering
Volume
21
Issue
1-4
Page
363-366
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Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j
Schönstein, I., Müller, J., Hilleringmann, U., & Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering, 21(1–4), 363–366. https://doi.org/10.1016/0167-9317(93)90092-j
@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={10.1016/0167-9317(93)90092-j}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }
Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” Microelectronic Engineering 21, no. 1–4 (2002): 363–66. https://doi.org/10.1016/0167-9317(93)90092-j.
I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” Microelectronic Engineering, vol. 21, no. 1–4, pp. 363–366, 2002, doi: 10.1016/0167-9317(93)90092-j.
Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” Microelectronic Engineering, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:10.1016/0167-9317(93)90092-j.
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