Modeling excitonic line shapes in weakly disordered semiconductor nanostructures

I. Kuznetsova, N. Gőgh, J. Förstner, T. Meier, S.T. Cundiff, I. Varga, P. Thomas, Physical Review B 81 (2010).

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Abstract
Excitonic spectra of weakly disordered semiconductor heterostructures are simulated on the basis of a one-dimensional tight-binding model. The influence of the length scale of weak disorder in quantum wells on the redshift of the excitonic peak and its linewidth is studied. By calculating two-dimensional Fouriertransform spectra we are able to determine the contribution of disorder to inhomogeneous and also to homogeneous broadenings separately. This disorder-induced dephasing is related to a Fano-type coupling and leads to contributions to the homogeneous linewidth that depends on energy within the inhomogeneously broadened line. The model includes heavy- and light-hole excitons and yields smaller inhomogeneous broadening for the light-hole exciton if compared to the heavy-hole exciton, which agrees qualitatively with the experiment.
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Journal Title
Physical Review B
Volume
81
Issue
7
Article Number
075307
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Kuznetsova I, Gőgh N, Förstner J, et al. Modeling excitonic line shapes in weakly disordered semiconductor nanostructures. Physical Review B. 2010;81(7). doi:10.1103/physrevb.81.075307
Kuznetsova, I., Gőgh, N., Förstner, J., Meier, T., Cundiff, S. T., Varga, I., & Thomas, P. (2010). Modeling excitonic line shapes in weakly disordered semiconductor nanostructures. Physical Review B, 81(7). https://doi.org/10.1103/physrevb.81.075307
@article{Kuznetsova_Gőgh_Förstner_Meier_Cundiff_Varga_Thomas_2010, title={Modeling excitonic line shapes in weakly disordered semiconductor nanostructures}, volume={81}, DOI={10.1103/physrevb.81.075307}, number={7075307}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kuznetsova, I. and Gőgh, N. and Förstner, Jens and Meier, Torsten and Cundiff, S. T. and Varga, I. and Thomas, P.}, year={2010} }
Kuznetsova, I., N. Gőgh, Jens Förstner, Torsten Meier, S. T. Cundiff, I. Varga, and P. Thomas. “Modeling Excitonic Line Shapes in Weakly Disordered Semiconductor Nanostructures.” Physical Review B 81, no. 7 (2010). https://doi.org/10.1103/physrevb.81.075307.
I. Kuznetsova et al., “Modeling excitonic line shapes in weakly disordered semiconductor nanostructures,” Physical Review B, vol. 81, no. 7, 2010.
Kuznetsova, I., et al. “Modeling Excitonic Line Shapes in Weakly Disordered Semiconductor Nanostructures.” Physical Review B, vol. 81, no. 7, 075307, American Physical Society (APS), 2010, doi:10.1103/physrevb.81.075307.
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