Initial Stage of Si(001) Surface Oxidation from First-Principles Calculations

F. Fuchs, W.G. Schmidt, F. Bechstedt, The Journal of Physical Chemistry B 109 (2005) 17649–17653.

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Journal Article | Published | English
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Journal Title
The Journal of Physical Chemistry B
Volume
109
Page
17649-17653
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Fuchs F, Schmidt WG, Bechstedt F. Initial Stage of Si(001) Surface Oxidation from First-Principles Calculations. The Journal of Physical Chemistry B. 2005;109:17649-17653. doi:10.1021/jp0501087
Fuchs, F., Schmidt, W. G., & Bechstedt, F. (2005). Initial Stage of Si(001) Surface Oxidation from First-Principles Calculations. The Journal of Physical Chemistry B, 109, 17649–17653. https://doi.org/10.1021/jp0501087
@article{Fuchs_Schmidt_Bechstedt_2005, title={Initial Stage of Si(001) Surface Oxidation from First-Principles Calculations}, volume={109}, DOI={10.1021/jp0501087}, journal={The Journal of Physical Chemistry B}, author={Fuchs, F. and Schmidt, Wolf Gero and Bechstedt, F.}, year={2005}, pages={17649–17653} }
Fuchs, F., Wolf Gero Schmidt, and F. Bechstedt. “Initial Stage of Si(001) Surface Oxidation from First-Principles Calculations.” The Journal of Physical Chemistry B 109 (2005): 17649–53. https://doi.org/10.1021/jp0501087.
F. Fuchs, W. G. Schmidt, and F. Bechstedt, “Initial Stage of Si(001) Surface Oxidation from First-Principles Calculations,” The Journal of Physical Chemistry B, vol. 109, pp. 17649–17653, 2005.
Fuchs, F., et al. “Initial Stage of Si(001) Surface Oxidation from First-Principles Calculations.” The Journal of Physical Chemistry B, vol. 109, 2005, pp. 17649–53, doi:10.1021/jp0501087.

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