Understanding reflectance anisotropy: Surface-state signatures and bulk-related features
W.G. Schmidt, F. Bechstedt, J. Bernholc, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18 (2000).
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Journal Article
| Published
| English
Author
Schmidt, Wolf GeroLibreCat 
;
Bechstedt, F.;
Bernholc, J.
;
Bechstedt, F.;
Bernholc, J.Publishing Year
Journal Title
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume
18
Issue
4
Article Number
2215
ISSN
LibreCat-ID
Cite this
Schmidt WG, Bechstedt F, Bernholc J. Understanding reflectance anisotropy: Surface-state signatures and bulk-related features. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 2000;18(4). doi:10.1116/1.1305289
Schmidt, W. G., Bechstedt, F., & Bernholc, J. (2000). Understanding reflectance anisotropy: Surface-state signatures and bulk-related features. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 18(4). https://doi.org/10.1116/1.1305289
@article{Schmidt_Bechstedt_Bernholc_2000, title={Understanding reflectance anisotropy: Surface-state signatures and bulk-related features}, volume={18}, DOI={10.1116/1.1305289}, number={42215}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures}, author={Schmidt, Wolf Gero and Bechstedt, F. and Bernholc, J.}, year={2000} }
Schmidt, Wolf Gero, F. Bechstedt, and J. Bernholc. “Understanding Reflectance Anisotropy: Surface-State Signatures and Bulk-Related Features.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, no. 4 (2000). https://doi.org/10.1116/1.1305289.
W. G. Schmidt, F. Bechstedt, and J. Bernholc, “Understanding reflectance anisotropy: Surface-state signatures and bulk-related features,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 4, 2000.
Schmidt, Wolf Gero, et al. “Understanding Reflectance Anisotropy: Surface-State Signatures and Bulk-Related Features.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 4, 2215, 2000, doi:10.1116/1.1305289.
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