Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon

F. Zirkelbach, B. Stritzker, K. Nordlund, J.K.N. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).

Download
No fulltext has been uploaded.
Journal Article | Published | English
Author
; ; ; ; ;
Publishing Year
Journal Title
Physical Review B
Volume
84
Issue
6
Financial disclosure
Article Processing Charge funded by the Deutsche Forschungsgemeinschaft and the Open Access Publication Fund of LibreCat University.
LibreCat-ID

Cite this

Zirkelbach F, Stritzker B, Nordlund K, Lindner JKN, Schmidt WG, Rauls E. Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon. Physical Review B. 2011;84(6). doi:10.1103/physrevb.84.064126
Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J. K. N., Schmidt, W. G., & Rauls, E. (2011). Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon. Physical Review B, 84(6). https://doi.org/10.1103/physrevb.84.064126
@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon}, volume={84}, DOI={10.1103/physrevb.84.064126}, number={6}, journal={Physical Review B}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, J. K. N. and Schmidt, Wolf Gero and Rauls, E.}, year={2011} }
Zirkelbach, F., B. Stritzker, K. Nordlund, J. K. N. Lindner, Wolf Gero Schmidt, and E. Rauls. “Combined Ab Initio and Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” Physical Review B 84, no. 6 (2011). https://doi.org/10.1103/physrevb.84.064126.
F. Zirkelbach, B. Stritzker, K. Nordlund, J. K. N. Lindner, W. G. Schmidt, and E. Rauls, “Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon,” Physical Review B, vol. 84, no. 6, 2011.
Zirkelbach, F., et al. “Combined Ab Initio and Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” Physical Review B, vol. 84, no. 6, 2011, doi:10.1103/physrevb.84.064126.

Export

Marked Publications

Open Data LibreCat

Search this title in

Google Scholar