Defects in carbon implanted silicon calculated by classical potentials and first-principles methods

F. Zirkelbach, B. Stritzker, K. Nordlund, J.K.N. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).

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Journal Article | Published | English
Author
Zirkelbach, F.; Stritzker, B.; Nordlund, K.; Lindner, J. K. N.; Schmidt, Wolf GeroLibreCat ; Rauls, E.
Publishing Year
Journal Title
Physical Review B
Volume
82
Issue
9
Financial disclosure
Article Processing Charge funded by the Deutsche Forschungsgemeinschaft.
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Zirkelbach F, Stritzker B, Nordlund K, Lindner JKN, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B. 2010;82(9). doi:10.1103/physrevb.82.094110
Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J. K. N., Schmidt, W. G., & Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B, 82(9). https://doi.org/10.1103/physrevb.82.094110
@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={10.1103/physrevb.82.094110}, number={9}, journal={Physical Review B}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, J. K. N. and Schmidt, Wolf Gero and Rauls, E.}, year={2010} }
Zirkelbach, F., B. Stritzker, K. Nordlund, J. K. N. Lindner, Wolf Gero Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” Physical Review B 82, no. 9 (2010). https://doi.org/10.1103/physrevb.82.094110.
F. Zirkelbach, B. Stritzker, K. Nordlund, J. K. N. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” Physical Review B, vol. 82, no. 9, 2010.
Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” Physical Review B, vol. 82, no. 9, 2010, doi:10.1103/physrevb.82.094110.

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